Three dimensional numerical simulation platform for SiC crystal growth furnace was established based on C programing language, where physical model of the furnace was built based on cylindrical coordinate, governing equations for electromagnetic and temperature fields were discretized by finite volume method, and radiation characteristic was studied with the help of S2S (Surface to Surface) radiation model. The least distance method was developed, which was used to check whether radiation surfaces were visible with each other or not efficiently. And then the radiation heat transfer in SiC growth chamber and temperature field of SiC growth furnace were studied quantificationally when the current intensity is 1250 A and the current frequency is 16 kHz. The effects of coil structures on crystal temperature field and its gradient distributions were studied by standard deviation method. The results showed that spiral electromagnetic coil generated asymmetrical temperature field easily. The radiation heat flux was 102~103 more than conduction heat flux. The radiation was helpful to increase temperature evenness. The spiral temperature field on the SiC crystal cross-section reduced the poor homogeneity of temperature gradient, which made the crystal to generate large thermal stress.
Chunzhen YANG Guangxia LIU Chengmin CHEN Min XU Liqiu WANG
. Numerical Simulation of Radiation Heat Transfer in SiC Crystal Growth Furnace[J]. The Chinese Journal of Process Engineering, 2018
, 18(2)
: 280
-287
.
DOI: 10.12034/j.issn.1009-606X.217295
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