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Flow & Transfer

Lattice Boltzmann numerical simulation of flow thermal coupling in porous media with electronic chips

  • Yue CHEN Ming MA Ying ZHANG Hailong GUO Qikun WAN
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  • 1. Institute for Advanced Study, Nanchang University, Nanchang, Jiangxi 330031, China 2. Department of Aerospace and Mechanical Engineering, The University of Notre Dame, Indiana 46556, America 3. School of Mechatronics Engineering, Nanchang University, Nanchang, Jiangxi 330031, China

Received date: 2019-03-28

  Revised date: 2019-06-01

  Online published: 2020-02-19

Supported by

;Natural Science Foundation of Jiangxi Province

Abstract

A coupling double-distribution model was developed for simulating natural convection of porous media containing electronic chips based on the lattice Boltzmann method. The effects of different physical parameters on the natural convection of porous media were studied, and the obtained results were compared with the previous literature’s data to verify the feasibility and reliability of the current model. On this basis, effects of the size of the single electronic chip, the layout of the multiple chips, and the surface temperature fluctuation of the single chip on the heat transfer performance of the surface of the electronic chip had been comprehensively investigated. In addition, in order to quantitatively analyze the influence of various parameters on heat dissipation of the electronic chip, the average Nusselt number was employed to evaluate the heat transfer performance, and the following results were obtained: regarding the natural convection inside the porous media with a single chip under a constant temperature boundary condition had a critical chip size at Da=10-2. Under the condition of critical chip size, the distribution of the flow field was quite stronger compared with the case of a chip with a smaller size, but the heat transfer performance was almost the same. When Ra=103, the critical chip size was 0.203125 times the cavity side length, and the critical chip size was 0.25 times the cavity side length at Ra=104. And the critical chip size was 0.390625 times the cavity side length at Ra=105. When the permeability of porous media decreased, the critical chip size did not exist, and the average Nusselt number in the chip surface and the cold wall increased accordingly. For the natural convection occurred in a constant-temperature porous media with multiple-chips, the horizontal arrangement of the chips can present a high heat transfer ratio in the case of porous medium with large permeability (Da=10?2), while for the porous media with small permeability (Da=10?4), the chip layout should be diagonally distributed.

Cite this article

Yue CHEN Ming MA Ying ZHANG Hailong GUO Qikun WAN . Lattice Boltzmann numerical simulation of flow thermal coupling in porous media with electronic chips[J]. The Chinese Journal of Process Engineering, 2020 , 20(2) : 123 -132 . DOI: 10.12034/j.issn.1009-606X.219169

References

[1]Cheng Ping. Heat transfer in geothermal systems[J]. Advance in Heat Transfer, 1978,4:(1-105).
[2]Nield, D. A. and Bejan, A. Convection in Porous Media[M]. Springer, New York, 1992.
[3]何雅玲, 王勇, 李庆. 格子Boltzmann 方法的理论及应用[M]. 北京: 科学出版社,2009:1-52.
He Y L,Wang Y,Li Q.Lattice Boltzmann Method:Theory and Applications[M].Beijing:Science Press,2009:1-52.
[4]郭照立, 郑楚光. 格子 Boltzmann 方法的原理及应用[M]. 北京: 科学出版社, 2009:1-43.
Guo Z L,Zheng C G.Theory and Applications of Lattice Boltzmann Method[M].Beijing:Science Press,2009:1-43.
[5]Guo Z L, Zhao T S. A LATTICE BOLTZMANN MODEL FOR CONVECTION HEAT TRANSFER IN POROUS MEDIA[J]. Numerical Heat Transfer Part B Fundamentals, 2005, 47(2):157-177.
[6]Seta T, Takegoshi E, Okui K. Lattice Boltzmann simulation of natural convection in porous media[J]. Mathematics & Computers in Simulation, 2006, 72(2):195-200.
[7]徐超, 何雅玲, 杨卫卫等. 现代电子器件冷却方法研究动态[J]. 制冷与空调, 2003, 3(4):10-13.
Xu C,He Y L,Yang W W.Modern research about elecronics cooling method[J].Refrigeration and air-conditioning, 2003, 3(4):10-13.
[8]胡志勇.当今电子设备冷却技术的发展趋势[J].电子机械工程, 1999, 1: 2–5.
Hu Z Y.Development trends of cooling technique for today’s electronic equipment[J].Electro-mechanical engineering, 1999, 1: 2–5.
[9]崔昊杨,许永鹏,曾俊冬等.多电子元件及芯片组布局的热分析[J].上海电力学院学报,2013,29(5):459-462.
Cui H Y,Xu Y P,Zeng J D.Thermal analysis of the multi electronic component and chipset placement.[J].Journal of Shanghai university of electric power,2013,29(5):459-462.
[10]Nithiarasu P, Seetharamu K N, Sundararajan T. Natural convective heat transfer in a fluid saturated variable porosity medium[J]. International Journal of Heat & Mass Transfer, 1997, 40(16):3955-3967.
[11]S. Ergun. Fluid flow through packed columns[J]. Chemical Engineering Progress, 1952, 48(2):89-94.
[12]Qian Y H, D'Humières D, Lallemand P. Lattice BGK Models for Navier-Stokes Equation[J]. Europhysics Letters, 1992, 17(6BIS):479.
[13]Guo Z L,Zheng C G , and Shi B C. Discrete lattice effects on the forcing term in the lattice Boltzmann method[J]. Phy.Rev.E., 2002, 65(4): 046308.
[14]Guo Z L,Shi B C.Non—equilibrium extrapolation method for velocity and pressure boundary conditions in the lattice Boltzmann method[J]. Chinese Physics B:Ehglish edition, 2002, 11(4):366-374.
[15]Li Q,He Y L,Wang Y,Tang G H.An improved thermal lattice Boltzmann model for flows without viscous heat dissipation and compression work[J]. Int.J.Mod.Phys.C, 2008, 19(01):125-150.
[16]Peng Y, Shu C, Chew Y T. Simplified thermal lattice Boltzmann model for incompressible thermal flows.[J]. Phys Rev E Stat Nonlin Soft Matter Phys, 2003, 68(2 Pt 2):026701.
[17]Nithiarasu P, Ravindran K. A new semi-implicit time stepping procedure for buoyancy driven flow in a fluid saturated porous medium[J]. Computer Methods in Applied Mechanics & Engineering, 1998, 165(1–4):147-154.
[18]马崇扬, 张东辉, 王长茂. 内置方形发热体的封闭方腔自然对流数值研究[C].//全国反应堆热工流体学术会议暨中核核反应堆热工水力技术重点实2015 年度学术年会. 2015.
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