In recent years, LED has been widely used in various lighting fields because of its energy-saving and environment-friendly characteristics. As a key part of LED products, epitaxial wafers are produced by metal-organic vapor deposition (MOCVD). With the rapid development of the LED industry, green and clean recycling of MOCVD production waste has attracted much attention. In this study, the leaching behavior and kinetics of Ga and In elements from MOCVD production waste were studied with sulfuric acid as a leaching agent. The effects of different types of leaching agents, H2SO4 concentration, solid-liquid ratio, leaching temperature and leaching time on the leaching efficiencies of Ga and In were systemically investigated. It was found that the leaching efficiencies of Ga and In can reach 67.50% and 91.46% under the optimal conditions of H2SO4 concentration of 3 mol/L, the solid-liquid ratio of 50 g/L, the temperature of 80℃, and the reaction of 120 min. The kinetics study showed that the leaching kinetics of Ga and In in the temperature range of 293.15~333.15 K was by the shrinkage core model, and the leaching process was controlled by surface chemical reaction and external diffusion mixing. At the same time, the results of XRD and SEM-EDS also confirmed the agreement with the shrinkage kernel model. The activation energies of Ga and In are 25.7 and 21.7 kJ/mol, respectively, when the leaching temperature was ranged from 293.15 K to 333.15 K. Based on the kinetics behavior of Ga and In leaching, the feasibility of enhanced roasting-acid leaching process was proposed and verified. It was found that the leaching efficiencies of Ga and In can be increased from 67.50% and 91.46% to 88.27% and 98.32%, respectively, under the enhanced roasting-acid leaching process. And gallium oxide byproducts were obtained. The findings from this research are expected to provide technical support and alternative for industrial recycling of critical metals from MOCVD production waste.