以水热法制备GdVO4:Sm3+上转换发光材料，表征了其形貌，考察了Sm3+掺杂量、焙烧温度及乙二胺四乙酸二钠(EDTA)掺杂量对材料上转换发光性能的影响. 结果表明，所制材料为四方晶系，在816 nm近红外光激发下，Sm3+掺杂量1.5%(mol)、焙烧温度800℃、EDTA:Sm3+(摩尔比)为1:1时，其上转换发光性能最好，发射峰位于565, 604, 647和706 nm处，分别归属于Sm3+的4G5/2→6HJ (量子数J=5/2, 7/2, 9/2, 11/2)电子跃迁，材料有可能用作LED灯荧光粉.

Trivalent samarium ion doped GdVO4 upconversion luminescence material was prepared by hydrothermal method, and its morphology characterized. The effects of concentration of Sm3+, roasting temperature and EDTA doping amount on the upconversion luminescence properties were examined. The results showed that GdVO4:Sm3+ samples were tetragonal crystals. Under 816 nm near infrared excitation, when the concentration of Sm3+ was 1.5%(mol), roasting temperature 800℃ and molar ratio of EDTA to Sm3+ 1:1, the best upconversion luminous performance was obtained. The emission spectra of GdVO4:Sm3+ phosphor exhibit four main peaks at 565, 604, 647 and 706 nm assigned to the 4G5/2→6HJ (Quantum number J=5/2, 7/2, 9/2, 11/2) transitions of Sm3+ under 816 nm excited radiation. The material could be used as phosphor of LED light.