采用电化学工作站测试了化学镀铜液中钨片及钨粉压片表面开路电位的变化规律，并对化学镀铜钨片及铜包钨复合粉进行了分析. 结果表明，刚浸入化学镀铜液时，钨粉开路电位约为-600 mV，经微增、速降过程后短时达到稳定电位(约-870 mV)，之后再迅速升高，300 s时基本达到稳态沉积电位(约-690 mV)，此时，铜单膜层包覆基本完成. EDTA×2Na与TART复合络合剂通过调节钨粉表面电荷分布促进铜包覆反应，微量(≤10 mg/L)添加剂2,2￠-联吡啶能有效抑制镀层中Cu2O生成，改善镀层质量.

The open circuit potential of electroless copper plating on process was measured by electrochemical workstation, and the copper-coated tungsten composite powder and tungsten strip after plating were characterized. The results show that during electroless copper plating, the initial open circuit potential is about -600 mV, and changes through slight increase and rapid drop, and becomes stable at about -870 mV in a short time, then follows a sharp rise, and finally reaches -690 mV in 300 s, in the meantime it remains stable and the copper thin-film plating is accomplished. The composite complexing agent of EDTA×2Na and TART can facilitate the copper plating reaction through adjusting the charge distribution on the surface of tungsten particles. Trace (≤10 mg/L) of 2,2￠-pyridine can effectively restrain the formation of Cu2O and improve the quality of the film.