Mg3Sb2基材料因其独特的层状晶体结构，具备低热导率和高塞贝克系数及载流子迁移率，是目前发展前景较好的中温热电材料之一。然而，与n型Mg3Sb2基热电材料相比，p型Mg3Sb2基材料热电优值(zT)较低。因此提升p型Mg3Sb2基材料的zT值对于开发Mg3Sb2基高效热电器件具有重要意义。本工作讨论了影响热输运性能的相关因素，总结了近年来通过点缺陷工程、结构纳米或低维化、筛选先进制备工艺等策略优化p型Mg3Sb2基材料热输运性能的研究进展。通过这些调控策略可显著提升p型Mg3Sb2基材料的热电性能，为热电器件的应用提供科学和技术支撑。

Mg3Sb2-based materials, featuring a unique layered crystal structure, exhibit a favorable combination of low thermal conductivity, high Seebeck coefficient, and decent carrier mobility, establishing them among the most promising mid-temperature thermoelectric systems under active investigation. However, p-type Mg3Sb2 derivatives demonstrate a comparatively lower thermoelectric figure of merit (zT) compared to their n-type counterparts. Enhancing the zT performance of p-type Mg3Sb2 is therefore essential for the development of high-efficiency thermoelectric devices based on this material system. This review systematically summarizes the critical factors governing the thermal transport properties of p-type Mg3Sb2, including intrinsic characteristics such as chemical bonding and crystal structure, as well as extrinsic parameters such as carrier concentration, mobility, point defects, microstructure, and temperature dependence effects. Furthermore, it highlights recent advances in strategies designed to optimize thermal conductivity (κ) and improve zT, mainly including point defect engineering (such as Mg-site doping, Sb-site doping, dual-site co-doping, as well as doping-assisted composite modification), low-dimensional and nanostructural design, and advanced preparation technologies. Experimental studies demonstrate that these targeted strategies, particularly the synergistic introduction of multi-scale defects, can effectively suppress phonon propagation and significantly reduce lattice thermal conductivity (κL). Consequently, substantial improvements in the overall zT of p-type Mg3Sb2-based materials have been realized, providing a robust scientific and technical foundation for accelerating the practical application of Mg3Sb2-based thermoelectric devices.